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Applied optics and optical engineering,Vol.IV by Rudolf Kingslake

By Rudolf Kingslake

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Also, it is usually the case that uA << 4nn. Solving Eqs. (55) to (59) with these approximations gives the following expressions for free carrier absqption and refraction: afc((n)= R2Ne3 4n2c3nocom~ffp and n“(A) = - A2Ne2 8n2c2noeomeff where the scattering time r has been replaced with the carrier mobility R2 dependence for both quantities suggests that these free carrier effects are more important at longer wavelengths. z 1 to 10pm). The wavelength dependence is also not quite correct. 5. The deviation from the A2 dependence can be understood as arising from a frequency-dependent carrier scattering time T, with the value of p depending on the scattering mechanisms (Seeger, 1991).

The solid lines are fits. 1 RESONANT OPTICAL NONLINEARITIES IN SEMICONDUCTORS 23 be measured accurately, the values obtained from the Kramers-Kronig relation are a better estimate of An. The measurements from fringe shift support the validity of the indirect procedure using the Kramers-Kronig relation. d. Modeling The carrier-density-dependent absorption was fit with a single saturation term plus a term corresponding to unsaturating background (Eq. 13). The saturation density N,,, was smallest for the material with 150-8, wells.

7. The low-intensity, room-temperature absorption for the five multiple quantum well samples. 1 RESONANTOPTICAL NONLINEARITIE~ IN SEMICONDUCTORS 19 respectively. The splitting of the energy for light- and heavy-hole transitions is another consequence of quantum confinement. For the wider, less confining wells, the light- and heavy-hole excitons have nearly the same energy and cannot be resolved separately. The notation n = 1, n = 2, etc. refers to transitions between the n = 1 hole subband and the n = 1 electron subband, etc.

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